High-breakdown slanted tri-gate gallium nitride power transistors

Jun Ma and Elison Matioli of the EPFL School of Engineering have used slanted tri-gate structures to enhance the breakdown voltage of gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) by 500V. They claim a record 1.2GW/cm2 high-power figure of merit.